vishay siliconix SIA911DJ document number: 74329 s-80437-rev. c, 03-mar-08 www.vishay.com 1 dual p-channel 20-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance applications ? load switch, pa switch and battery switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 20 0.094 at v gs = - 4.5 v - 4.5 a 4.9 nc 0.131 at v gs = - 2.5 v - 4.5 a 0.185 at v gs = - 1.8 v - 4.5 a markin g code x x x d c x lot tracea b ility and date code part # code s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 orderin g information: SIA911DJ-t1-ge3 (lead (p b )-free and halogen-free) notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( h ttp://www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 4.5 a a t c = 70 c - 4.5 a t a = 25 c - 3.6 b, c t a = 70 c - 2.9 b, c pulsed drain current i dm - 8 continuous source-drain diode current t c = 25 c i s - 4.5 a t a = 25 c - 1.6 b, c maximum power dissipation t c = 25 c p d 6.5 w t c = 70 c 5 t a = 25 c 1.9 b, c t a = 70 c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 rohs compliant
www.vishay.com 2 document number: 74329 s-80437-rev. c, 03-mar-08 vishay siliconix SIA911DJ notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 16.2 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 4.5 v 8a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.8 a 0.078 0.094 v gs = - 2.5 v, i d = - 2.3 a 0.109 0.131 v gs = - 1.8 v, i d = - 0.54 a 0.153 0.185 forward transconductance a g fs v ds = - 10 v, i d = - 2.8 a 7s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 355 pf output capacitance c oss 75 reverse transfer capacitance c rss 50 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 4.5 a 8.5 12.8 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 4.5 a 4.9 7.4 gate-source charge q gs 0.75 gate-drain charge q gd 1.2 gate resistance r g f = 1 mhz 8 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.2 i d ? - 4.5 a, v gen = - 4.5 v, r g = 1 10 15 ns rise time t r 35 55 turn-off delay time t d(off) 40 60 fall time t f 50 75 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.2 i d ? - 4.5 a, v gen = - 8 v, r g = 1 510 rise time t r 10 15 turn-off delay time t d(off) 20 30 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4.5 a pulse diode forward current i sm 8 body diode voltage v sd i s = - 4.5 a, v gs = 0 v - 0.85 - 1.2 v body diode reverse recovery time t rr i f = - 4.5 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 13 26 nc reverse recovery fall time t a 10 ns reverse recovery rise time t b 15
document number: 74329 s-80437-rev. c, 03-mar-08 www.vishay.com 3 vishay siliconix SIA911DJ typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 v gs = 2.5 thr u 5 v 1.5 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 2 v 0.05 0.1 0.15 0.2 0.25 0.3 e ( ) c n a t s i s e r - n o - r (on) s d i - drain c u rrent (a) v gs = 2.5 v gs = 4.5 v v gs = 1. 8 v d 0 2 8 4 6 10 v 0 2 4 6 8 0246 8 10 i d = 4.5 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v gs v ds = 10 v v ds = 16 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.3 0.6 0.9 1.2 1.5 t c = 125 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d t c = 25 c t c = - 55 c 0 100 200 300 400 500 600 04 8 12 16 20 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) r ) n o ( s d sistance e r - n o - ) d e z i l a m r o n ( i d = 2. 8 a v gs = 4.5 v , 2.5 v , 1. 8 v
www.vishay.com 4 document number: 74329 s-80437-rev. c, 03-mar-08 vishay siliconix SIA911DJ typical characteristics 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage 0.1 1 10 0 0.2 0.6 0. 8 1 1.2 0.4 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s t j = 25 c t j = 150 c 0.4 0.5 0.6 0.7 0. 8 0.9 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - temperat u re (c) v ) h t ( s g ) v ( on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.1 0.15 0.2 0.25 0.3 012345 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( ) e c n a t s i s e r - n o - 0.05 i d = 2. 8 a t a = 125 c t a = 25 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 safe operating area, junction-to-case v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 0.1 1 1 0 100 i d(on) limited limited by r ds(on)* idm limited t a = 25 c single pulse bvdss limited 10 s dc 10 ms 100 ms 1 ms 1 s 100 s 10 1 0.01 - drain current (a) i d 0.1
document number: 74329 s-80437-rev. c, 03-mar-08 www.vishay.com 5 vishay siliconix SIA911DJ typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) package limited power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
www.vishay.com 6 document number: 74329 s-80437-rev. c, 03-mar-08 vishay siliconix SIA911DJ typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74329. normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
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